RRL035P03
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
-
30
-
1.0
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
36
52
58
-
800
120
110
7
9
75
40
8.0
2.5
3.0
Max.
10
-
1
2.5
50
72
81
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=3.5A, V
GS
=10V
m I
D
=1.7A, V
GS
=4.5V
I
D
=1.7A, V
GS
=4.0V
I
D
=3.5A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=1.7A, V
DD
15V
V
GS
=10V
R
L
=8.8
R
G
=10
I
D
=3.5A, V
DD
15V
V
GS
=5V R
L
=4.3
R
G
=10
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=3.5A, V
GS
=0V
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2010.04 - Rev.A
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