4V Drive Pch MOSFET
RRR040P03
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TSMT3
Features
1) Low On-resistance.
2) Space saving small surface mount package (TSMT3).
3) 4V drive.
(3)
(1)
(2)
Abbreviated symbol : UG
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRR040P03
Taping
TL
3000
Inner circuit
(3)
∗2
(1)
∗1
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
4
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Source
(3) Drain
(2)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
16
0.8
16
1.0
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth
(ch-a)
*
Limits
125
Unit
C
/ W
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2010.04 - Rev.A
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