Data Sheet
4V Drive Nch MOSFET
RSD100N10
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.9 2.3
(1)
(2)
(3)
2.3
0.8Min.
Features
1) Low on-resistance.
2) 4V drive.
3) High power package.
5.5
1.5
0.65
0.5
1.0
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSD100N10
Taping
TL
2500
Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1
ESD PROTECTION DIODE
2
BODY DIODE
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 P
W
10s,
Duty cycle1%
*2 T
C
=25°C
*3 Please use within the range of SOA.
Limits
100
20
10
20
10
20
20
150
55
to
150
Unit
V
V
A
A
A
A
W
C
C
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*3
*1
*3
*1
*2
Thermal resistance
Parameter
Channel to Case
* T
C
=25°C
Symbol
Rth (ch-c)
*
Limits
6.25
Unit
C
/ W
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1/6
2011.06 - Rev.A
2.5
0.75
0.9
1.5
9.5
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