RTE002P02
Transistors
2.5V Drive Pch MOS FET
RTE002P02
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
EMT3
1.6
0.3
0.7
0.55
Features
1) Low On-resistance.
2) Small package (EMT3).
3) 2.5V drive.
(1)Source
(2)Gate
(3)
0.8
(2)
(1)
1.6
0.2
0.5 0.5
1.0
0.2
0.15
Applications
Switching
(3)Dr
ain
Abbreviated symbol : TW
Package specifications
Package
Type
RTE002P02
Code
Basic ordering unit (pieces)
Taping
TL
3000
Inner circuit
(3)
(2)
∗2
∗1
(1)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Source
(2) Gate
(3) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Each terminal mounted on a recommended land
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
−20
±12
±0.2
±0.4
0.15
150
−55
to
+150
Unit
V
V
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
∗
Limits
833
Unit
°C/W
0.1Min.
1/2
ROHM [ ROHM ]
