4V Drive Pch MOSFET
RW1E015RP
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Space saving, high power package.
3) Low voltage drive. (4V)
(1)
(2)
(3)
Dimensions
(Unit : mm)
WEMT6
(6)
(5)
(4)
Applications
Switching
Inner circuit
(6)
Abbreviated symbol : UJ
(5)
(4)
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RW1E015RP
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Taping
T2R
8000
∗2
∗1
(1)
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
When mounted on a ceramic board
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
∗1
∗1
∗2
Limits
−30
±20
±1.5
±6
−0.5
−6
0.7
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
When mounted on a ceramic board.
Symbol
Rth(ch-a)
∗
Limits
179
Unit
°C
/ W
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1/4
2009.06 - Rev.A
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