1.5V Drive Pch +SBD MOSFET
TT8U2
Structure
Silicon P-channel MOSFET / schottky barrier diode
Features
1) Pch MOSFET and shottky barrier diode are put in TSST8 package.
2) High-speed switching and Low on-resistance.
3) Low voltage drive(1.5V).
4) Built in Low I
R
shottky barierr daiode.
Applications
Switching
Packaging
specifications
Type
TT8U2
Absolute
maximum ratings
(Ta = 25C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Channel temperature
Power dissipation
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Dimensions
(Unit : mm)
TSST8
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol : U02
Inner
circuit
Taping
TR
3000
(8)
(7)
(6)
(5)
Package
Code
Basic ordering unit (pieces)
Symbol
V
DSS
V
GSS
Limits
20
10
2.4
9.6
0.8
9.6
150
1.0
Unit
V
V
A
A
A
A
C
W / ELEMENT
(1) ANODE
(2) ANODE
(3) SOURCE
(4) GATE
(5) DRAIN
(6) DRAIN
(7) CATHODE
(8) CATHODE
∗1
(1)
(2)
(3)
(4)
∗1
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
*1
I
SP
Tch
*2
P
D
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
*1 60Hz / 1Cycle
*2 Mounted on a ceramic board
Symbol
V
RM
V
R
I
F
*1
I
FSM
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
C
W / ELEMENT
T
j
P
D
*2
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
* Mounted on a ceramic board
Symbol
P
D
*
Tstg
Limits
1.25
55
to
150
Unit
W / TOTAL
C
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.02 - Rev.B
ROHM [ ROHM ]
