RU1HL8L
P-Channel Advanced Power MOSFET
Features
Pin Description
• -100V/-10A,
R
R
DS (ON) =120mΩ(tpy.)@VGS=-10V
DS (ON) =180mΩ(tpy.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management
• DC/DC Converters
P-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
-100
±16
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
-10
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
-40
IDP
300μs Pulse Drain Current Tested
A
A
TC=25°C
TC=100°C
TC=25°C
TC=100°C
-10
ID
Continuous Drain Current(VGS=-10V)
-8
40
PD
Maximum Power Dissipation
W
20
3.75
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
②
25
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com