RU1H35L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/40A,
R
DS (ON) =21mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
TO-252
Applications
• High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
100
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
40
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
160
IDP
300μs Pulse Drain Current Tested
A
A
②
40
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
30
97
48
W
W
PD
Maximum Power Dissipation
1.55
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
90
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
