RU1HE16L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/16A,
R
R
DS (ON) =70mΩ(tpy.)@VGS=10V
DS (ON) =85mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management.
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
100
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
16
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
64
IDP
300μs Pulse Drain Current Tested
A
A
②
16
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
11
50
PD
Maximum Power Dissipation
W
25
3
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
70
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
