RU2021H
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/20A,
R
R
DS (ON) =4mW(Typ.) @ VGS=10V
DS (ON) =5mW(Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
SOP-8
• Lead Free and Green Available
Applications
• DC/DC Converter
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
20
±12
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
4.4
TA=25°C
TA=25°C
Mounted on Large Heat Sink
①
70
IDP
300μs Pulse Drain Current Tested
A
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
20
ID
Continuous Drain Current(VGS=10V)
16
3.1
PD
Maximum Power Dissipation
W
2
②
RqJA
40
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
