RU2090M
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/99A,
R
R
DS (ON) =2.3mΩ(tpy.)@VGS=10V
DS (ON) =4mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
PDFN 5X6
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Rectification
• Switching Application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
20
±12
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
-55 to 150
IS
TC=25°C
A
50
Mounted on Large Heat Sink
②
360
IDP
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
A
A
①
99
①
66
③
TC=100°C
TA=25°C
TA=70°C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
ID
Continuous Drain Current(VGS=10V)
26
③
21
66
W
26
PD
Maximum Power Dissipation
③
4.2
③
2.7
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
