RU2HE2D
N-Channel Advanced Power MOSFET
Features
Pin Description
• 200V/1.2A,
R
R
DS (ON) =0.95W(Typ.) @ VGS=10V
DS (ON) =1W(Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
• Fast Switching
SOT-223
• Lead Free and Green Available
Applications
• Power Management
• DC-DC Converter
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
200
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
1
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
4.5
A
A
①
1.2
ID
Continuous Drain Current
0.9
2.5
PD
Maximum Power Dissipation
W
1.6
50
②
RqJA
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
