RU3060L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/53A,
R
R
DS (ON) =9mΩ(tpy.)@VGS=10V
DS (ON) =13mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Fast Switching and Fully Avalanche Rated
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Desktop
Computer, Portable Equipment and
DC/DC Converters.
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
30
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
53
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
212
IDP
300μs Pulse Drain Current Tested
A
A
②
53
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
41
50
PD
Maximum Power Dissipation
W
25
3
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
110
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. C– JAN., 2012
www.ruichips.com