RU30S4H
P-Channel Advanced Power MOSFET
Features
Pin Description
• -30V/-4.8A,
R
R
DS (ON) =50mW(Typ.) @ VGS=-10V
DS (ON) =80mW(Typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
SOP-8
Applications
• Power Management.
Dual P-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
-30
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
-2.5
TA=25°C
TA=25°C
Mounted on Large Heat Sink
①
-18
IDP
300μs Pulse Drain Current Tested
A
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-4.8
ID
Continuous Drain Current
-3.8
2
PD
Maximum Power Dissipation
W
1.3
②
RqJA
62.5
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
