RU4068L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 40V/55A,
R
R
DS (ON) =10mΩ(tpy.)@VGS=10V
DS (ON) =15mΩ(tpy.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
TO252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Inverter
• Power Supplies
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
40
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
30
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
220
IDP
300μs Pulse Drain Current Tested
A
A
②
55
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
38
60
PD
Maximum Power Dissipation
W
30
2.5
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
121
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2011
www.ruichips.com