RU40L10H
P-Channel Advanced Power MOSFET
Features
Pin Description
• -40V/-9.5A,
R
R
DS (ON) =19mW(Type) @ VGS=-10V
DS (ON) =30mW(Type) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
SOP-8
• Lead Free and Green Available
Applications
• DC-DC Converter.
P-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
-40
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
-9.5
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
-38
IDP
300μs Pulse Drain Current Tested
A
A
TC=25°C
TC=70°C
TC=25°C
TC=70°C
-9.5
ID
Continuous Drain Current
-8
3.1
PD
Maximum Power Dissipation
W
2.0
40
②
RqJA
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
