RU5H5L
N-Channel Advanced Power MOSFET
Features
Pin Description
• 500V/5A,
R
DS (ON) =1.3Ω(tpy.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
TO-252
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switch Model Power Supplies
• Electronic Lamp Ballasts
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
500
±30
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
150
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 150
①
5
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
A
Mounted on Large Heat Sink
②
20
IDP
300μs Pulse Drain Current Tested
A
A
①
5
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current(VGS=10V)
3.2
78
31
W
W
PD
Maximum Power Dissipation
1.6
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
25
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
