RU60E5H
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/5A,
R
R
DS (ON) =60mW(Typ.) @ VGS=10V
DS (ON) =70mW(Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• ESD Protected
SOP-8
• Lead Free and Green Available
Applications
• Power Management
• Switch Applications
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
60
±20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
3
TA=25°C
TA=25°C
Mounted on Large Heat Sink
①
20
IDP
300μs Pulse Drain Current Tested
A
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
5
ID
Continuous Drain Current
3.7
2.5
PD
Maximum Power Dissipation
W
1.6
50
②
RqJA
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
