RU6199
N-Channel Advanced Power MOSFET
Features
Pin Description
· 60V/200A
RDS (ON)=2.8 mW(Typ.) @ VGS=10V
·Avalanche Rated
TO-220
TO-263
TO-220F
TO-247
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
60
VDSS
VGSS
TJ
Drain-Source Voltage
V
±25
Gate-Source Voltage
°C
°C
175
Maximum Junction Temperature
-55 to 175
TSTG
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
I
S
200
A
Mounted on Large Heat Sink
①
IDP
ID
T =25°C
TC=25°C
C
300ms Pulsed Drain Current Tested
800
②
A
200
Continue Drain Current
TC=100°C
TC=25°C
TC=100°C
140
380
220
0.45
PD
Maximum Power Dissipation
W
RqJC
RqJA
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
°C/W
62.5
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
1500
mJ
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A – JAN., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
