RU6588R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 65V/80A,
R
DS (ON) =8mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
TO-220
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching Application Systems
• Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
65
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
175
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 175
①
80
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
A
Mounted on Large Heat Sink
②
320
IDP
300μs Pulse Drain Current Tested
A
A
①
80
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
59
115
58
W
W
PD
Maximum Power Dissipation
1.3
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
296
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
