RU6H10P
N-Channel Advanced Power MOSFET
Features
Pin Description
• 600V/10A,
R
DS (ON) =0.65W(Type) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 15pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
TO-220
TO-263
TO-220F
TO-247
Applications
• High efficiency switch mode power
supplies
N-Channel MOSFET
• Electronic lamp ballasts based on half
bridge
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
600
±30
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
10
TC=25°C
Mounted on Large Heat Sink
①
40
①
IDP
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
A
A
10
ID
Continuous Drain Current
①
7
35
PD
Maximum Power Dissipation
W
14
3.6
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
②
450
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
