RU6H2R
N-Channel Advanced Power MOSFET
Features
Pin Description
•600V/2A,
R
DS (ON) =4W(Typ.) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 5pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
TO-220
Applications
• High efficiency switch mode power
supplies
• Lighting
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
600
±30
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
2
TC=25°C
Mounted on Large Heat Sink
①
8
IDP
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
A
A
①
2
ID
Continuous Drain Current
①
1.2
62.5
PD
Maximum Power Dissipation
W
25
2.0
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
②
9
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
