RU6H9R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 600V/9.5A,
R
DS (ON) =0.7W(Typ.) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 20pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
TO-220
Applications
• High efficiency switch mode power
supplies
• Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
600
±30
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
150
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 150
①
9.5
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
A
Mounted on Large Heat Sink
②
IDP
300μs Pulse Drain Current Tested
A
A
38
①
9.5
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current(VGS=10V)
6.2
156
62
W
W
PD
Maximum Power Dissipation
0.8
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
10
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
www.ruichips.com