RU6Z5R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 650V/4.5A,
RDS (ON) =1.8Ω (Typ.)@VGS=10V
• Super High Dense Cell Design
• Fast Switching
• 100% avalanche tested
TO-220
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• High efficiency switch mode power
supplies
• Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
650
±30
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
150
Maximum Junction Temperature
Storage Temperature Range
TSTG
-55 to 150
①
4.5
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
A
Mounted on Large Heat Sink
②
IDP
300μs Pulse Drain Current Tested
A
A
18
①
4.5
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current(VGS=10V)
2.8
83
W
W
PD
Maximum Power Dissipation
33
1.5
RθJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
157
Avalanche Energy, Single Pulsed
mJ
EAS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
