RU7088R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 70V/80A,
RDS (ON) =6.5mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
TO220
Applications
• Switching Application Systems
• Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
Drain-Source Voltage
70
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
TSTG
IS
-55 to 175
80
TC=25°C
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
320
80
A
A
IDP
②
Continuous Drain Current(VGS=10V)
Maximum Power Dissipation
ID
60
150
75
PD
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
RθJC
RθJA
1
°C/W
°C/W
62.5
Drain-Source Avalanche Ratings
③
Avalanche Energy, Single Pulsed
560
mJ
EAS
Ruichips Semiconductor Co., Ltd
Rev. E– DEC., 2012
1
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
