RU80100R
N-Channel Advanced Power MOSFET
Features
Pin Description
• 80V/100A,
R
DS (ON) =5.5mW(Type) @ VGS=10V,IDS=40A
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
TO-220
TO-263
TO-220F
TO-247
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• High Current Switching Applications
• Inverter Systems
N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
80
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 175
100
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
400
IDP
300μs Pulse Drain Current Tested
A
A
②
100
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
②
90
188
PD
Maximum Power Dissipation
W
94
0.8
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
729
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
