RU8048S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 80V/48A,
R
DS (ON) =13mΩ(tpy.)@VGS=10V
• Super High Dense Cell Design
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
TO-263
Applications
• DC-DC Converters and Off-line UPS
• Automotive Load Control
• Electronic Power Steering System
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
80
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
175
Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
-55 to 175
48
Diode Continuous Forward Current
TC=25°C
TC=25°C
Mounted on Large Heat Sink
①
192
IDP
300μs Pulse Drain Current Tested
A
A
②
48
TC=25°C
TC=100°C
TC=25°C
TC=100°C
ID
Continuous Drain Current
41
111
W
W
PD
Maximum Power Dissipation
56
1.35
RqJC
Thermal Resistance-Junction to Case
°C/W
Drain-Source Avalanche Ratings
③
330
Avalanche Energy, Single Pulsed
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
