RU8099
N-Channel Advanced Power MOSFET
Features
Pin Description
• 90V/90A
RDS (ON)=8mW(Typ.) @ VGS=10V
• Ultra Low On-Resistance
TO-220
TO-247
TO-220F
TO-263
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High efficiency switching mode
power supply
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
90
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
175
°C
°C
A
Maximum Junction Temperature
TSTG
Storage Temperature Range
-55 to 175
①
Diode Continuous Forward Current
TC=25°C
I
S
90
Mounted on Large Heat Sink
TC=25°C
TC=25°C
TC=100°C
360
IDP
ID
300ms Pulsed Drain Current Tested
①
90
A
Continue Drain Current
65
TC=25°C
175
86
PD
Maximum Power Dissipation
W
TC=100°C
RqJC
RqJA
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
0.86
°C/W
62.5
Drain-Source Avalanche Ratings
②
Avalanche Energy ,Single Pulsed
1306
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
www.ruichips.com
Rev.A –SEP., 2010
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
