RU8205G
N-Channel Advanced Power MOSFET
Features
Pin Description
• 20V/6A,
R
R
DS (ON) =21mW(Typ.) @ VGS=4.5V
DS (ON) =30mW(Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
TSSOP-8
• Lead Free and Green Available
Applications
• Power Management
Dual N-Channel MOSFET
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
20
±12
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
150
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
TSTG
IS
-55 to 150
1.7
TA=25°C
TA=25°C
Mounted on Large Heat Sink
①
24
IDP
300μs Pulse Drain Current Tested
A
A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
6
ID
Continuous Drain Current(VGS=4.5V)
4.5
1.5
PD
Maximum Power Dissipation
W
0.96
83.5
②
RqJA
Thermal Resistance-Junction to Ambient
°C/W
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. B– NOV., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
