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2N4393DCSM 参数 Datasheet PDF下载

2N4393DCSM图片预览
型号: 2N4393DCSM
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号双N沟道J- FET在密封陶瓷表面贴装封装,高可靠性的 [SMALL SIGNAL DUAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS]
分类和应用:
文件页数/大小: 2 页 / 53 K
品牌: SAMES [ SAMES ]
 浏览型号2N4393DCSM的Datasheet PDF文件第1页  
LAB
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
STATIC CHARACTERISTICS
V
(BR)GSS
Gate – Source Breakdown Voltage
V
GSS(off)
I
DSS*
I
GSS
Gate – Source Cut–off Voltage
Saturation Current
Gate Reverse Current
V
DS
= 0V
V
DS
= 15V
V
DS
= 20V
V
GS
= –5V
V
DS
= 0V
V
DG
= 10V
I
D(off)
V
DS(on)
R
DS(on)
Drain Cut–off Current
Drain – Source On Voltage
Drain – Source On Resistance
DYNAMIC CHARACTERISTICS
R
DS(on)
C
ISS
C
RSS
_
e
n
Drain – Source On Resistance
Common – Source Input Capacitance
Common – Source Reverse Transfer
Capacitance
Equivalent Input Noise Voltage
V
GS
= 0V
f = 1kHz
V
DS
= 20V
f = 1MHz
V
DS
= 0V
f = 1MHz
V
DG
= 10V
f = 1kHz
I
D
= 10mA
V
GS
= –5V
V
GS
= 0V
13
4
3.0
I
D
= 0mA
100
16
5
pF
pF
nV
√Hz
SEME
2N4393DCSM
Test Conditions
I
G
= –1µA
I
D
= 10nA
V
GS
= 0V
T
amb
= 125°C
V
GS
= –10V
V
GS
= –10V
T
amb
= 125°C
V
GS
= 0V
V
GS
= 0V
I
D
= 3mA
I
D
= 1mA
Min.
–35
–0.5
5
Typ.
–55
Max. Unit
V
mA
–3
–5
–3
5
3
0.25
–100
–200
100
200
0.4
100
pA
nA
pA
nA
V
V
DS
= 10V
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Document Number 2835
Issue 1