SM7501NF
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C Unless Otherwise Noted)
Test Conditions
SM7501NF
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
b
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=30V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
1.5
3450
470
190
23
12
77
69
-
-
-
-
42
23
140
125
Ω
pF
V
DD
=30V, R
L
=30Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
ns
Gate Charge Characteristics
Total Gate Charge
-
V
DS
=30V, V
GS
=10V,
I
DS
=40A
-
-
70
19
22
98
-
-
nC
Gate-Source Charge
Gate-Drain Charge
Note a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
3
www.sinopowersemi.com
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