S DP /B 65N03L
S amHop Microelectronics C orp.
S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V
DS S
30V
F E AT UR E S
( m
W
) TYP
I
D
65A
R
DS (on)
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
8 @ V
G S
= 10V
12 @ V
G S
= 4.5V
D
D
G
D
S
G
S
G
S DP S E R IE S
TO-220
S DB S E R IE S
TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
-P ulsed
a
S ymbol
V
DS
V
GS
@ TJ=125 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
20
65
195
65
75
0.5
-65 to 175
Unit
V
V
A
A
A
W
W/ C
C
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R
JC
R
JA
1
2
62.5
C /W
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
