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2SA1216 参数 Datasheet PDF下载

2SA1216图片预览
型号: 2SA1216
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SA1216
Application :
Audio and General Purpose
(Ta=25°C)
2SA1216
–100
max
–100
max
–180
min
30
min
–2.0
max
40
typ
500
typ
V
MHz
pF
20.0min
4.0max
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC2922)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1216
–180
–180
–5
–17
–5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
SymboI
V
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–180V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–8A
I
C
=–8A, I
B
=–0.8A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
B2
(V)
5
I
B1
(A)
–1
I
B2
(A)
1
t
on
(
µ
s)
0.3typ
t
stg
(
µ
s)
0.7typ
t
f
(
µ
s)
0.2typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–1.
00
m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
(V )
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–1 7
–1 5
C ol l e c t o r C u r r e nt I
C
( A)
( V
C E
= –4 V )
5A
–1
A
00
m
A
–17
–15
–5
–7
–4
A
00m
–300m
A
C o l l e c t o r C u r r e nt I
C
( A )
–2 00 m A
–10
–2
e T
em
p)
Tem
p)
–150mA
–1 0
–100mA
–5
˚C(
125
–50mA
C(C
25˚
I
C
= – 10 A
– 5A
0
0
I
B
=–20mA
0
0
–1
–2
–3
–4
0
– 0 .2
–0 . 4
– 0. 6
–0 . 8
– 1. 0
0
–30
–1
˚C(
Cas
–5
ase
–1
e T
emp
)
Cas
–2
– 2 .4
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
Ba s e Cu r r en t I
B
( A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
300
DC Cu r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4 V)
200
D C C ur re n t Gai n h
F E
1 2 5˚ C
100
25 ˚ C
50
–3 0˚ C
Transient Thermal Resistance
θ
j -a
( ˚C / W )
2
θ
j - a
– t Characteristics
1
100
Typ
0.5
50
10
–0.02
–0. 1
– 0. 5
–1
–5
–10 –17
10
–0.02
– 0. 1
– 0. 5 –1
C o ll e ct o r Cu r r e nt I
C
( A)
–5
– 10 –1 7
0.1
1
10
100
T i m e t( m s )
1 00 0
2 0 00
C ol l ec t or Cur ren t I
C
(A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V)
60
–50
Safe Operating Area
(Single Pulse)
2 00
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
10
m
1 60
Cu t-o ff Fr e q u e n c y f
T
( M H
Z
)
s
W
40
Ty
p
C oll ec tor Cu r r e n t I
C
(A )
–10
–5
DC
ith
In
fin
1 20
ite
he
at
si
nk
80
20
–1
–0.5
Without Heatsink
Natural Cooling
40
W i t ho u t He a t s i nk
0
25
50
75
10 0
125
150
0
0.02
0. 1
1
10
–0.2
–2
–1 0
– 10 0
– 30 0
5
0
Em i t t er C urr en t I
E
(A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p er at u r e T a ( ˚ C )
13