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2SA1294 参数 Datasheet PDF下载

2SA1294图片预览
型号: 2SA1294
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频和通用) [Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SA1294
Application :
Audio and General Purpose
(Ta=25°C)
2SA1294
–100
max
–100
max
–230
min
50
min
–2.0
max
35
typ
500
typ
V
pF
20.0min
4.0max
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3263)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1294
–230
–230
–5
–15
–4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–230V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), Y(70 to 140)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.35typ
t
stg
(
µ
s)
1.50typ
t
f
(
µ
s)
0.30typ
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sa t)
(V )
V
CE
( sat ) – I
B
Characteristics
(Typical)
– 3
I
C
– V
B E
Temperature Characteristics
(Typical)
–1 5
( V
C E
= –4 V )
–3
.0A
–2
.0
A
–15
–1
.
5A
–1
.0A
–5
00
mA
C o l l e c t o r C u r r e nt I
C
( A )
–30
0m
A
–10
C ol l e c t o r C ur r en t I
C
( A)
–20
0mA
–2
–1 0
–5
–1
I
C
= –1 0A
–5
–50mA
I
B
=–20mA
– 5A
0
0
0
0
–1
–2
–3
–4
0
–0 .5
– 1. 0
–1 .5
– 2. 0
0
125
˚C (
Cas
25˚C
eTe
mp
(Ca
)
seT
emp
–30
)
˚C (
Cas
eTe
mp)
–1 00 m A
–1
–2
–2 . 5
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V)
Bas e C u r r e nt I
B
( A)
Ba s e - E m i t t or V o l t a ge V
BE
( V )
(V
C E
= – 4 V)
200
D C C u r r en t G ai n h
FE
D C C u r r en t G ai n h
FE
200
12 5˚ C
100
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
25 ˚ C
1
50
50
– 30 ˚ C
0.5
10
–0.02
–0 . 1
– 0. 5
–1
–5 – 1 0 – 1 5
10
–0.02
–0 . 1
–0 . 5
–1
–5
–10 –15
0.1
1
10
100
Time t(ms)
1 0 0 0 2 0 00
Co l l ect o r Curr en t I
C
(A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V )
60
–40
Safe Operating Area
(Single Pulse)
130
10
m
s
Pc – Ta Derating
C ut- off F r e q u e n cy f
T
( M H
Z
)
–10
C olle c to r C u r r e n t I
C
(A )
DC
M a xim u m P o w e r D i s s i p a t i o n P
C
( W )
100
W
ith
40
Ty
–5
In
p
fin
ite
he
at
si
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
nk
50
20
W i th o u t H e a t s i n k
–10
– 1 00
– 3 00
3.5
0
0
25
50
75
100
1 25
150
0
0.02
0. 1
1
10
– 0 .0 5
–3
Em i t t er C urr en t I
E
(A)
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
15