2SA1693
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4466)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1693
–80
–80
–6
–6
–3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1693
–10
max
–10
max
–80
min
50
min
∗
–1.5
max
20
typ
150
typ
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–80V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–2A
I
C
=–2A, I
B
=–0.2A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
10
I
C
(A)
–3
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.3
I
B2
(A)
0.3
t
on
(
µ
s)
0.18typ
t
stg
(
µ
s)
1.10typ
t
f
(
µ
s)
0.21typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–6
–2
00
m
A
–1
5
V
CE
(sat ) – I
B
Characteristics
(Typical)
–3
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
( V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
= –4 V )
A
0m
–100m
A
–8 0m A
C o l l e c t o r Cu r r e n t I
C
( A)
C o l l e c t o r C u r r e nt I
C
( A )
–4
–50mA
–2
–4
–30mA
Tem
p)
e Te
mp)
Cas
e
–2
–20mA
–1
I
C
= –6 A
–4A
– 2A
0
0
–0 . 5
– 1. 0
– 1. 5
–2
I
B
=–10mA
˚C (
(Cas
0
0
–1
–2
–3
–4
0
0
–30˚C
25˚C
125
–1
Ba s e - E m i t to r V ol t ag e V
B E
( V)
(Case
Temp
)
–2
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V )
Ba s e C ur r en t I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= – 4 V )
300
D C C u r r e n t Gai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4V)
300
DC C ur re nt Ga i n h
FE
1 25 ˚ C
25˚C
100
–3 0˚ C
Transient Thermal Resistance
θ
j -a
( ˚C / W )
5
θ
j- a
– t Characteristics
Typ
100
1
50
50
0. 5
0. 3
30
–0.02
–0 . 1
–0 .5
–1
–5 –6
30
–0.02
– 0. 1
–0 .5
–1
–5 – 6
1
10
10 0
Time t(ms)
1 0 00 2 0 0 0
Co l le ct o r Curre nt I
C
(A)
C ol l ec t or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= – 1 2 V )
30
–20
Safe Operating Area
(Single Pulse)
60
10
Pc – Ta Derating
Typ
Cu t-o ff F re q u e n c y f
T
(M H
Z
)
Co lle ct o r C u r r e n t I
C
( A )
s
–5
20
100ms
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
–10
m
W
ith
DC
40
In
fin
ite
he
at
si
–1
– 0 .5
Without Heatsink
Natural Cooling
nk
10
20
W i t h o ut H e a ts i n k
0
0.02
0.0 5 0 . 1
0 .5
1
5 6
– 0 .1
–5
– 10
– 50
–1 0 0
3.5
0
0
25
50
75
100
12 5
1 50
Emi t t e r Cu rre nt I
E
(A)
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
27
SANKEN [ SANKEN ELECTRIC ]
