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2SC3519A 参数 Datasheet PDF下载

2SC3519A图片预览
型号: 2SC3519A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
Ratings
Symbol
2SC3519 2SC3519A
V
CBO
160
180
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
160
5
15
4
130(Tc=25°C)
150
–55 to +150
180
2SC3519/3519A
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
2SC3519 2SC3519A
100
max
160
160
min
180
100
max
180
min
50
min
50
typ
250
typ
MHz
pF
5.45
±0.1
B
C
E
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1386/A)
s
Absolute maximum ratings
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
Conditions
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
V
19.9
±0.3
4.0
µ
A
V
V
a
b
ø3.2
±0.1
2.0
max
2
3
1.05
+0.2
-0.1
5.45
±0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–1
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.3typ
t
f
(
µ
s)
0.45typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
0m
60
0m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
C E
= 4V )
15
A
70
500
mA
400
mA
300
mA
C o l l e c to r C u r r e n t I
C
( A)
10
2
C o l l e c t or C u r r e n t I
C
( A )
200m
A
10
100mA
p)
(C
as
eT
em
5
1
5
50mA
12
˚C
0
0
1
2
3
4
0
0
0 .2
0.4
0. 6
0 .8
1 .0
0
0
–30
25
1
B a s e - Em i t t o r Vo l ta g e V
B E
( V)
˚C
I
B
=20mA
5A
(Ca
C
se
Te
m
I
C
= 10 A
p)
2
C o l le ct o r - Em i t t er Vo l t ag e V
C E
(V)
Bas e C ur r e nt I
B
( A)
(V
C E
= 4 V )
300
DC Cu r r e nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
300
( V
C E
= 4V)
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
12 5˚ C
100
2 5˚ C
50
– 3 0˚ C
100
1
0.5
Typ
50
10
0.02
0.1
0. 5
1
5
10 15
10
0 .0 2
0. 1
0.5
1
5
1 0 15
0.1
1
10
100
T i m e t( m s )
1 00 0 2 00 0
Co l l ect o r C u rren t I
C
(A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
80
40
Safe Operating Area
(Single Pulse)
1 30
10
ms
Pc – Ta Derating
10
Cut -o ff F r e q u e n c y f
T
(M H
Z
)
60
Co lle ct o r C u r r e n t I
C
( A )
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
Typ
5
DC
1 00
W
ith
In
fin
ite
he
40
at
1
0.5
Without Heatsink
Natural Cooling
1 .2 SC 35 19
2. 2 SC3 5 19 A
0.1
1
2
20 0
si
nk
50
20
W i t ho u t H ea t s i nk
3 .5
0
0
25
50
75
100
125
150
0
–0.02
–0. 1
–1
–5
–10
0 .0 5
5
10
50
1 00
Emi t t e r C ur ren t I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
67