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2SC3856 参数 Datasheet PDF下载

2SC3856图片预览
型号: 2SC3856
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3856
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1492)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3856
200
180
6
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
100
max
100
max
180
min
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
2SC3856
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
V
pF
50
min
2.0
max
20
typ
300
typ
MHz
a
b
ø3.2
±0.1
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–1
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
1.8typ
t
f
(
µ
s)
0.6typ
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
1A
0m
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE(sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
CE
=4 V )
15
70
50
0
mA
300m
A
C o l l ec to r C u r r e n t I
C
( A )
C o l l e c to r C u r r e n t I
C
( A )
200mA
10
10 0m A
2
10
mp)
e Te
Cas
˚C (
25˚C
I
B
=20mA
I
C
= 10 A
5A
0
0
0 .5
1.0
B as e C ur r en t I
B
( A )
1 .5
2 .0
0
0
0
0
1
2
3
4
–30˚C
125
(Case
5
50mA
1
5
(Cas
e Te
1
B as e- Em i t t or V o l t a g e V
B E
( V )
Temp)
mp)
2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
(V
C E
=4 V)
300
DC Cu r r en t G a i n h
FE
D C Cu r r en t G a i n h
FE
200
1 25 ˚ C
100
25 ˚ C
( V
C E
= 4V)
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
1
0.5
100
Typ
50
50
– 3 0˚ C
20
0.02
0.1
0. 5
1
5
10 15
20
0.02
0.1
0.5
1
5
10 15
0.1
1
10
1 00
Time t(ms)
10 0 0 20 0 0
C o ll e ct o r Cu rren t I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
30
40
Safe Operating Area
(Single Pulse)
10
3m
Pc – Ta Derating
130
0m
Cu t-o ff Fre qu e n c y f
T
( M H
Z
)
10
20
Co lle cto r C u r re n t I
C
( A )
D
C
s
M ax im um P o wer Di s s i p a t i o n P
C
( W )
Typ
10
m
s
s
100
W
ith
In
5
fin
ite
he
at
si
nk
1
0 .5
50
10
Without Heatsink
Natural Cooling
W i t h o ut H e at s i n k
0
–0.02
– 0. 1
–1
Emi t t e r Curre nt I
E
(A )
–10
0 .1
3
10
10 0
20 0
3.5
0
0
25
50
75
10 0
125
150
Col l ec t or - Em i tt e r V ol t ag e V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
78