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2SC3858 参数 Datasheet PDF下载

2SC3858图片预览
型号: 2SC3858
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3858
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1494)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3858
200
200
6
17
5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=8A
I
C
=10A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
100
max
100
max
200
min
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
2SC3858
Unit
µ
A
µ
A
V
a
b
50
min
2.5
max
20
typ
300
typ
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank Y(50 to 100), P(70 to 140), G(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–1
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
1.8typ
t
f
(
µ
s)
0.6typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
5A
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE(sa t)
(V )
3
I
C
– V
BE
Temperature Characteristics
(Typical)
17
15
( V
CE
= 4V )
17
15
1.
1A
70
0
mA
500
mA
30
C o l l ec to r C u r r e n t I
C
( A )
0mA
200mA
2
C o l l e c to r C u r r e n t I
C
( A )
10
100m A
10
p)
Tem
I
B
=20mA
10 A
5A
0
0
1
2
3
0
0
0
0
1
2
3
4
–30˚C
I
C
= 15 A
(Case
5
50mA
5
125
˚C
(Ca
25˚C
se
1
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
Temp
)
2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
Bas e C u r r e nt I
B
( A)
(V
C E
= 4 V )
300
DC C ur r e nt Ga i n h
F E
D C Cu r r en t G a i n h
FE
200
1 25 ˚ C
100
2 5˚ C
50
– 3 0˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
100
Typ
1
0.5
50
20
0.02
0.1
0. 5
1
5
10 17
10
0 .0 2
0. 1
0 .5
1
5
1 0 17
0.1
1
10
10 0
Time t(ms)
1000
2000
C ol l e ct or C urre nt I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
30
50
Safe Operating Area
(Single Pulse)
200
20
m
s
10
3m
Pc – Ta Derating
m
s
D
M ax im um P o wer Di s s i p a t i o n P
C
( W )
Typ
C ut- of f Fre qu e n c y f
T
(M H
Z
)
10
5
s
C
160
10
0m
s
W
ith
20
Co llec to r Cu r r en t I
C
( A )
In
fin
120
ite
he
at
si
nk
1
0 .5
Without Heatsink
Natural Cooling
80
10
40
W i t h o ut H e at s i n k
0
25
50
75
100
1 25
150
0
–0.02
0 .1
– 0. 1
–1
Emi t t e r Curre nt I
E
(A )
–10
2
10
10 0
30 0
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
5
0
Am bi e nt T e m pe r a t u r e T a ( ˚ C )
80