L
OW
V
CE
(sat)
Silicon NPN Epitaxial Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4131
100
50
15
15(
Pulse
25)
4
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SC4131
Application :
DC-DC Converter, Emergency Lighting Inverter and General Purpose
(Ta=25°C)
2SC4131
10
max
10
max
50
min
60 to 360
0.5
max
1.2
max
18
typ
210
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=100V
V
EB
=15V
I
C
=25mA
V
CE
=1V, I
C
=5A
I
C
=5A, I
B
=80mA
I
C
=5A, I
B
=80mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
4
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.08
I
B2
(A)
–0.08
t
on
(
µ
s)
0.5
typ
t
stg
(
µ
s)
2.0
typ
t
f
(
µ
s)
0.4
typ
3.35
B
C
E
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE(s a t)
(V )
15
V
CE
( sat) – I
B
Characteristics
(Typical)
1 .3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
C E
= 1V )
85mA
80mA
1 .0
C ol l e c t o r C ur r en t I
C
( A)
40mA
C ol l e c t o r C ur r e nt I
C
( A )
12
10
8
25mA
15mA
0 .5
15A
10A
(Ca
˚C
I
C
= 1 A
3A
0
0
2
4
6
0
0.002
0.01
0.1
Ba s e Cu r r en t I
B
( A)
1
2
0
0
–30˚
125
5A
25˚C
C (C
I
B
=7mA
(Ca
4
ase T
5
Te
mp
)
se T
emp
)
se
emp
)
0.5
1.0
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V )
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
( V
C E
=1 V)
1000
DC C ur re nt Ga i n h
FE
1000
DC C ur re nt Ga i n h
FE
( V
C E
= 1V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
12 5˚ C
500
500
Typ
2 5 ˚C
–30˚C
1
0.5
100
70
0.02
0.1
1
C ol l e ct or C ur ren t I
C
(A )
10 15
100
70
0 .0 2
0 .1
1
Co l le c to r C ur r en t I
C
( A)
10 15
0.3
1
10
Time t(ms)
10 0
3.0
1.5
1 00 0
t
on
•t
stg
• t
f
– I
C
Characteristics
(Typical)
5
t
s tg
V
CC
2 0 V
I
C
= 5A
I
B1
=– I
B 2
= 80 mA
Col lec tor Cu rr e n t I
C
(A )
40
Safe Operating Area
(Single Pulse)
60
1m
Pc – Ta Derating
s
10
DC
10
0m
s
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
Sw itc hin g Tim e
t
on•
t
s tg•
t
f
(µ s )
10
m
s
40
W
1
t
f
0.5
ith
5
In
fin
ite
he
at
si
20
nk
1
t
on
Without Heatsink
Natural Cooling
0.4
0. 5
1
5
10
3
5
10
50
1 00
C ol l ec t or C urr en t I
C
(A)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Without Heatsink
3.5
0
0
50
100
15 0
0.1
0.08
0. 1
A m b i e n t T em p e r a tu r e T a ( ˚ C )
89
SANKEN [ SANKEN ELECTRIC ]
