2SC4468
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1695)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4468
200
140
6
10
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SC4468
10
max
10
max
140
min
50
min
∗
0.5
max
20
typ
250
typ
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
O(50 to100), P(70 to140), Y(90 to180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.24
typ
t
stg
(
µ
s)
4.32
typ
t
f
(
µ
s)
0.40
typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
0m
A
20
0
mA
1
A
50m
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=4 V )
10
A
40
30
8
C o l l e c to r C u r r e n t I
C
( A)
100m
A
8
C o l l ec to r C u r r e n t I
C
( A)
75mA
2
6
50 m A
6
(Case
2
25˚C
2
I
C
= 1 0 A
5A
0
0
0. 5
1. 0
Bas e C u r r e nt I
B
( A)
1. 5
2. 0
0
0
˚C (
I
B
=10mA
0
0
1
2
3
4
–30˚C
125
(Case
20m A
1
Cas
e Te
4
1
B a s e - E m i t t o r Vo l ta g e V
BE
( V )
Temp)
4
mp)
Temp
)
2
C ol l ec t or - Emi t te r V ol ta ge V
C E
(V)
(V
C E
= 4 V )
200
D C C u r r e n t G ai n h
FE
DC C ur r e nt Ga i n h
F E
300
1 25 ˚ C
100
25˚C
–3 0˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
1
0.5
50
50
20
0.02
0. 1
0.5
1
5
10
20
0 .0 2
0 .1
0 .5
1
5
10
0.1
1
10
100
Time t(ms)
1 0 00 2 0 0 0
Co l l ec t or C urre nt I
C
(A)
C ol l e ct or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
40
30
Safe Operating Area
(Single Pulse)
10 0
3m
Pc – Ta Derating
10
C ut- off F r eq u e n c y f
T
( M H
Z
)
30
Co llec t o r C u r r e n t I
C
( A )
10
0m
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
s
W
10
Typ
5
DC
ith
ms
s
In
fin
ite
he
20
50
at
si
nk
1
0.5
Without Heatsink
Natural Cooling
10
0
–0.02
– 0. 1
–1
Em i t t e r C u rre nt I
E
(A )
–10
0.1
3
5
10
50
10 0
20 0
3. 5
0
Without Heatsink
0
25
50
75
100
1 25
1 50
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
108
SANKEN [ SANKEN ELECTRIC ]
