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2SD2082 参数 Datasheet PDF下载

2SD2082图片预览
型号: 2SD2082
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(用于驱动电磁阀,电机和通用) [Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Motor and General Purpose)]
分类和应用: 晶体晶体管电机驱动
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2082
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=16mA
I
C
=8A, I
B
=16mA
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
2SD2082
10
max
10
max
120
min
2000
min
1.5
max
2.5
max
20
typ
210
typ
V
V
16.2
Equivalent
circuit
B
C
(2kΩ) (100Ω) E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1382)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2082
120
120
6
16(
Pulse
26)
1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
23.0
±0.3
V
9.5
±0.2
mA
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
5
I
C
(A)
8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
16
I
B2
(mA)
–16
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
7.0typ
t
f
(
µ
s)
1.5typ
3.35
B
C
E
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
16
( V
C E
=4 V )
A
26
40m
20
1
2m
m
A
6mA
20
C o l l ec t or C u r r e n t I
C
( A)
3mA
2
1 .5 m A
I
C
= 1 6 A
8A
1
4A
C o l l ec t or C u r r e n t I
C
( A)
12
8
)
)
Te
10
I
B
=1 mA
emp
(Ca
se T
4
12
5˚C
(Ca
25˚C
0
0
1
2
3
4
5
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
Ba s e- E m i t t or V o l t a ge V
BE
( V )
–30
˚C (
Cas
e Te
se
mp)
mp
2
Co l l ect o r - Em i t t er V ol ta ge V
C E
(V)
Ba s e C ur r en t I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=4 V )
30000
D C C u r r e n t Gai n h
F E
10000
5000
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V)
20000
D C C ur r e n t Gai n h
FE
10000
5000
25
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
θ
j - a
– t Characteristics
5
Typ
125
˚C
˚C
–30
˚C
1
0.5
1000
500
1000
500
100
0.2
0.5
1
C o ll e ct o r Cu rren t I
C
(A )
5
10
16
100
0 .0 2
0.5
1
Co l le c to r Cu r r en t I
C
( A)
5
10
16
0.1
1
10
Time t(ms)
1 00
3.0
1000
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
30
50
Safe Operating Area
(Single Pulse)
80
10
10
Pc – Ta Derating
Typ
Cu t-o ff F re q u e n c y f
T
(M H
Z
)
10
Co lle ct o r C u r r e n t I
C
( A )
20
5
DC
s
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
m
1m
s
0
µ
s
60
W
ith
In
fin
ite
he
1
0 .5
Without Heatsink
Natural Cooling
0 .1
0.05
0.03
3
40
at
si
nk
10
20
0
–0.05 –0.1
–0 . 5
–1
–5
–10 –16
5
10
50
10 0
200
3. 5
0
Without Heatsink
0
25
50
75
100
125
150
Em i t t er C ur ren t I
E
(A)
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
145