Equivalent circuit
C
Darlington
2SD2401
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
2SD2401
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
55
typ
95
typ
V
V
MHz
pF
20.0min
4.0max
B
(7 0
Ω)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1570)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2401
160
150
5
12
1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
µ
A
µ
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
R
L
(Ω)
10
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
7
I
B2
(mA)
–7
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
10.0typ
t
f
(
µ
s)
1.1typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
CE (s at)
(V )
12
A
10m
2.
5mA
V
CE
(sat) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
12
( V
C E
=4 V )
2.0m
A
10
C ol l e c t o r C u r r e nt I
C
( A)
1. 5m A
10
C o l l e c t o r C u r r e n t I
C
( A )
8
1.2 mA
2
8
1. 0m A
6
0.8m A
I
C
= 1 0A
I
C
= 7 A
1
I
C
= 5 A
6
p)
)
emp
se T
(Ca
se
4
4
125
0
0
2
4
6
0
0 .2
0.5
1
5
10
50
100 200
0
0
1
–30
2
2
25˚C
˚C (
˚C
I
B
=0.4mA
Cas
(Ca
e Te
0.6mA
Tem
mp)
2
2.6
C ol l ec t or - Emi t t e r V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V )
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
40000
D C Cu r r en t G a i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
70000
50000
12 5˚ C
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
2
θ
j - a
– t Characteristics
Typ
10000
5000
D C C u r r e n t Gai n h
FE
1
10000
5000
25 ˚ C
–3 0˚ C
0.5
1000
1000
02
0.5
1
C ol l ec t or C urr en t I
C
(A)
5
10 12
600
0 .2
0.5
1
C ol l e ct or C u r r e nt I
C
( A)
5
10 12
0.1
1
5
10
50
1 00
5 0 0 1 0 0 0 2 0 00
Time t(ms)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
100
30
Safe Operating Area
(Single Pulse)
16 0
10
m
Pc – Ta Derating
80
Cu t-o ff Fr e q u en c y f
T
( M H
Z
)
Co lle cto r C u r r e n t I
C
( A)
10
5
DC
10
0m
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
s
s
12 0
W
ith
In
60
Typ
fin
ite
he
1
0 .5
Without Heatsink
Natural Cooling
0 .1
80
at
si
nk
40
40
20
0
–0.02
– 0. 1
–1
Em it t e r C urr en t I
E
( A)
–10
0.05
3
5
10
50
10 0
15 0
200
5
0
Without Heatsink
0
25
50
75
100
1 25
150
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
150
SANKEN [ SANKEN ELECTRIC ]
