Ordering number : EN6561B
5LN01S
SANYO Semiconductors
DATA SHEET
5LN01S
Features
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
50
±10
0.1
0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7027-004
5LN01S-TL-E
0.4
0.3
Product & Package Information
• Package
: SMCP
• JEITA, JEDEC
: SC-75, SOT-416
• Minimum Packing Quantity : 3,000 pcs./reel
0.4
0.2
1.6
0.8
Packing Type: TL
Marking
1
2
1.6
0.5 0.5
LOT No.
LOT No.
3
TL
YB
0 to 0.1
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
0.75
0.6
0.1
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
62712 TKIM/41006PE MSIM TB-00002188/81000 TS(KOTO) TA-2049 No.6561-1/7
SANYO [ SANYO SEMICON DEVICE ]
