ATP405
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=40A, VGS=0V
VDS=60V, VGS=10V, ID=40A
See specified Test Circuit.
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
VDS=20V, f=1MHz
Ratings
min
100
10
±10
2.0
62
25
4000
300
170
38
125
220
150
68
14
15
0.9
1.2
33
3.5
typ
max
Unit
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=60V
Avalanche Resistance Test Circuit
10V
0V
L
VIN
ID=20A
RL=3Ω
D
VOUT
ATP405
G
10V
0V
ATP405
50Ω
VDD
≥50Ω
PW=10μs
D.C.≤1%
P.G
50Ω
S
Ordering Information
Device
ATP405-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1458-2/7
SANYO [ SANYO SEMICON DEVICE ]
