Ordering number:ENN6524
NPN Epitaxial Planar Silicon Transistor
EC3H06B
UHF to S Band Low-Noise Amplifier
and OSC Applications
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain :
S21e
2
=10dB typ (f=1.5GHz).
· High cutoff frequency : f
T
=11GHz typ.
· Low voltage, low current operation.
(V
CE
=1V, I
C
=1mA)
: f
T
=7GHz typ.
:
S21e
2
=5.5dB typ (f=1.5GHz).
· Ultrasmall (1006size), slim (0.5mm) leadless pack-
age.
Package Dimensions
unit:mm
2183
[EC3H06B]
0.35
0.2
0.15
0.05
1
0.4
0.15
2
0.05
1.0
0.65
0.25
3
0.5
0.25
0.05
0.05
(Bottom view)
0.6
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : E-CSP1006-3
0.5
Ratings
20
10
1.5
30
100
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT1
fT2
Cob
Cre
| S21e |
2
1
| S21e
|
2
2
NF1
NF2
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=10mA, f=1.5GHz
VCE=1V, IC=1mA, f=1.5GHz
VCE=5V, IC=5mA, f=1.5GHz
VCE=2V, IC=3mA, f=1GHz
8
100
8
11
7
0.45
0.30
10
5.5
1.4
0.9
3.0
0.7
Conditions
Ratings
min
typ
max
1.0
10
180
GHz
GHz
pF
pF
dB
dB
dB
dB
Unit
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92500TS (KOTO) TA-2482 No.6524–1/5
SANYO [ SANYO SEMICON DEVICE ]
