Ordering number : ENN7039
MCH6607
P-Channel Silicon MOSFET
MCH6607
Ultrahigh-Speed Switching Applications
Preliminary
Features
•
•
•
•
Package Dimensions
Low ON-resistance.
unit : mm
Ultrahigh-speed switching.
2173A
2.5V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitaing high-density mounting.
0.25
2.1
1.6
[MCH6607]
0.3
0.15
4
5
6
0.25
3 2
0.65
2.0
0.07
1
6
5
4
0.85
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
!0.8mm)1unit
2
1
2
3
Conditions
Ratings
--30
±10
--0.4
--1.6
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=--1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=±8V, VDS=0
VDS=-
-10V, ID=--100µA
VDS=-
-10V, ID=--100mA
ID=--100mA, VGS=--4V
ID=--50mA, VGS=-
-2.5V
ID=--10mA, VGS=-
-1.5V
Ratings
min
--30
--10
±10
--0.4
210
300
2.4
3.5
10
3.1
4.9
20
--1.4
typ
max
Unit
V
µA
µA
V
mS
Ω
Ω
Ω
Marking : FG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82201 TS IM TA-2462 No.7039-1/4
SANYO [ SANYO SEMICON DEVICE ]
