SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5873 2N5874
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
2N5873
V
CBO
Collector-base voltage
2N5874
2N5873
V
CEO
Collector-emitter voltage
2N5874
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
80
5
7
115
150
-65~200
V
A
W
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
