SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Complement to type 2N6317/6318
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6315 2N6316
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
PARAMETER
2N6315
Collector-base voltage
2N6316
2N6315
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N6316
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
80
5
7
15
2
90
200
-65~200
V
A
A
A
W
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.94
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
