SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdwon voltage
Emitter-base breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
CONDITIONS
I
C
=0.2A ;I
B
=0
I
E
=5m A ;I
C
=0
I
C
=5A ;I
B
=0.5A
I
C
=10A; I
B
=1A
I
C
=5A ;I
B
=0.5A
I
C
=10A; I
B
=1A
V
CE
=100V;V
BE
=0
T
C
=125
V
CE
=140V; I
B
=0
V
CB
=150V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=2V
I
C
=10A ; V
CE
=2V
I
E
=0 ; V
CB
=10V;f=1MHz
20
10
MIN
120
6.5
TYP.
2N6354
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
I
CEO
I
CEV
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
MAX
UNIT
V
V
0.5
1.0
1.3
2.0
10
10
20
5
5
150
100
300
V
V
V
V
mA
mA
mA
mA
pF
2
SAVANTIC [ Savantic, Inc. ]
