SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-2A;I
B
=-0.2 A
V
CB
=-80V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-2A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
I
E
=0; V
CB
=10V;f=1MHz
50
20
MIN
-80
2SA1907
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
-0.5
-10
-10
180
V
µA
µA
MHz
pF
150
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A;R
L
=10@
I
B1
=-I
B2
=-0.3A;V
CC
=-30V
0.18
1.10
0.21
µs
µs
µs
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2
SAVANTIC [ Savantic, Inc. ]
